 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA572T N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The PA572T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.2 +0.1 -0 0.15 +0.1 -0.05 FEATURES * Two source common MOS FET circuits in package the same size as SC-70 * Directly driven by 3 V power supply * Automatic mounting supported 0.65 1.3 2.0 0.2 0.65 1.25 0.1 2.1 0.1 0 to 0.1 0.7 0.9 0.1 EQUIVALENT CIRCUIT 5 4 PIN CONNECTION 1. Gate 1 (G1) 2. Source (common) 3. Gate 2 (G2) 4. Drain 2 (D2) 5. Drain 1 (D1) Marking: DB 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg PW 10 ms, Duty Cycle 50 % VGS = 0 VDS = 0 TEST CONDITIONS RATINGS 30 7 100 200 200 (Total) 150 -55 to +80 -55 to +150 UNIT V V mA mA mW C C C Document No. G11244EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan (c) 1996 PA572T ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = 5 V, ID = 10 mA, VGS(on) = 5 V, RG = 10 , RL = 500 TEST CONDITIONS VDS = 30 V, VGS = 0 VGS = 5 V, VDS = 0 VDS = 3 V, ID = 10 A VDS = 3 V, ID = 10 mA VGS = 2.5 V, ID = 1 mA VGS = 4.0 V, ID = 10 mA VDS = 5.0 V, VGS = 0, f = 1 MHz 0.8 20 1.0 50 7 5 16 14 2 15 20 100 100 13 8 MIN. TYP. MAX. 1.0 3.0 1.5 UNIT A A V mS pF pF pF ns ns ns ns SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED) VGS DUT RL Gate voltage waveform ID 90 % 0 10 % VGS(on) VDD RG PG. Drain current waveform VGS 0 = 1 s Duty Cycle 1 % 0 10 % 90 % 90 % ID 10 % td(on) ton tr td(off) toff tr 2 PA572T TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 250 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total power dissipation 200 80 60 40 20 PT - Total Power Dissipation - mW dT - Derating Factor - % 150 To ta l 100 50 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C 0 30 60 90 120 150 TA - Ambient Temperature - C 180 TRANSFER CHARACTERISTICS VDS = 3 V Pulsed 100 measurement 500 2.0 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 30 V ID = 10 A 1.6 10 VGS(off) - Gate Cut-off Voltage - V ID - Drain Current - mA 1.2 1 TA = 150 C 75 C 25 C -25 C 0.8 0.1 0.01 0.4 0.001 0.1 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate to Source Voltage - V 3.5 0 -50 0 50 100 Tch - Channel Temperature - C 150 |yfs| - Forward Transfer Admittance - mS VDS = 3 V Pulsed 200 measurement 100 50 TA = 25 C 20 10 5 2 1 0.5 1 2 5 10 20 50 ID - Drain Current - mA 100 200 75 C 150 C -25 C 400 RDS(on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 12 Pulsed measurement 10 8 6 10 mA ID = 100 mA 4 2 0 1 2 3 4 5 6 7 VGS - Gate to Source Voltage - V 8 3 PA572T DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 24 20 16 12 8 4 0 0.5 25 C -25 C TA = 150 C 75 C VGS = 2.5 V Pulsed measurement DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 VGS = 4 V Pulsed measurement RDS(on) - Drain to Source On-State Resistance - RDS(on) - Drain to Source On-State Resistance - 20 10 -25 C 25 C 75 C TA = 150 C 1 2 5 10 20 ID - Drain Current - mA 60 0 0.5 1 3 10 30 ID - Drain Current - mA 100 200 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 50 300 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 30 200 td(off) 100 50 tf VDD = 5 V VGS = 5 V Rin = 10 10 Ciss Coss tr 3 20 td(on) 1 VDS = 5 V f = 1 MHz Crss 10 6 10 20 50 100 ID - Drain Current - mA 300 0.3 0.3 1 3 10 30 VDS - Drain to Source Voltage - V 50 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 200 VGS = 0 V Pulsed measurement 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ISD - Source to Drain Current - mA 100 30 10 3 1 0.3 0.1 0.3 4.0 V 80 3.5 V 3.0 V ID - Drain Current - mA 60 2.5 V 40 VGS = 2.0 V 20 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD - Source to Drain Voltage - V 1.1 0 1 2 3 4 VDS - Drain to Source Voltage - V 5 4 PA572T REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 PA572T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
Price & Availability of UPA572
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |